【摘要】 芯片级尺寸封装的气密性被越来越广泛的关注，为了实现CSP器件的可伐管帽与陶瓷基板之间的气密性互连，采用分层电镀沉积的方法在高温共烧陶瓷(HTCC)基板表面制备了金/锡/金镀层，利用金与锡间的共晶反应以实现管帽和基板的气密性可靠封接.文中分析了金/锡/金镀层质量、焊接工艺对Au80Sn20共晶焊料封接结果的影响.结果表明，金/锡/金镀层厚度和层间的结合力决定了Au-Sn共晶焊料的封接质量.在焊接升温过程中，锡镀层首先熔化形成“熔池”，溶解上下侧与之接触的金镀层，直至完成共晶反应；采用较短的焊接时间能够实现更好的金锡共晶封接；焊接温度为330℃、保温时间为30 s时，Au-Sn镀层共晶反应形成δ/(Au,Ni)Sn—ζ相—δ/(Au,Ni)Sn的分层共晶组织，实现了可伐管帽与HTCC基板的气密性封接.更多还原

【Abstract】 Hermetical packaging in CSP component is increasingly investigated. In order to realize the hermetic interconnection between Kovar cap and ceramic substrate, the electroplating method was used and Au/Sn/Au sandwiched layers were fabricated on the HTCC substrate. Through the eutectic reaction between Au and Sn, a hermetic interconnection was realized. In this paper, the influence of Au/Sn/Au electroplated layer quality and soldering parameter on the packaging quality of Au-Sn eutectic solder was systematically investigated. It is found that the Au/Sn/Au electroplated layer thickness and interlayer bonding would directly determine the packaging results. During the soldering process, Sn electroplated layer firstly melted and a molten pool thus formed. The molten Sn then dissolved the surrounding Au electroplated layer and the Au-Sn eutectic reaction occurred. The shorter soldering time was better for the Au-Sn eutectic packaging. When the soldering temperature was 330 ℃ and holding time was set to 30 s, the(Au, Ni)Sn—ζ phase—(Au, Ni)Sn delaminated eutectic microstructures formed due to Au-Sn eutectic reaction and a reliable hermetical packaging between Kovar cap and HTCC substrate was eventually realized.更多还原