【摘要】 极紫外(EUV)光刻胶的研发作为适配未来光刻技术的发展方向，现已成为超高精度集成电路制造的最高效工艺技术。其中，(4-(甲基丙烯酰氧基)苯基)二甲基锍三氟甲磺酸盐(MAPDST)作为一种含辐射敏感锍基功能的关键单体，现已广泛应用于极紫外(EUV)光刻胶的研发生产过程中。首先，简要阐述在制约光刻胶性能提升过程中存在的分辨率(R)、线边缘粗糙度(LER)、曝光灵敏度(S)之间的平衡制约关系，即RLS平衡制约关系；随后，对MAPDST单体的优越性能以及在推动光刻胶朝着高分辨率方向发展的应用现状进行综述；最后，对EUV光刻胶材料及MAPDST单体的未来发展做出展望。更多还原

【Abstract】 Extreme ultraviolet(EUV) photoresist has become the most efficient technology for the manufacture of ultra-high precision integrated circuits.Among them,(4-(methylacryloxy) phenyl) dimethyl matte trifluoromesulfonate(MAPDST),as a key monomer containing radiation-sensitive matte group function, has been widely used in the development and production of EUV photoresist.Firstly, the balanced restriction relationship between resolution(R),line edge roughness(LER),and exposure sensitivity(S),i.e.,the RLS relation, in the process of improving the performance of photoresist was briefly described.Subsequently, the excellent performance of MAPDST monomer and its application in promoting the development of photoresist towards high resolution were reviewed.Finally, the future development of EUV photoresist materials and MAPDST monomer was prospected.更多还原