【摘要】 为了获得微尺寸半导体桥电容发火的特征参数与设计参数的关系，对20μm×50μm×4μm 60°的半导体桥进行了不同掺杂浓度、发火电容、发火电压及两种点火药剂下的发火试验，获得设计参数与半导体桥的特征能量、特征时间的关系。结果表明：半导体桥的发火电容值从10μF增大到68μF时，高掺杂的半导体桥/斯蒂芬酸铅的最小全发火电压为6.23～4.28V，比低掺杂的半导体桥降低了0.86～1.52V；半导体桥发生电爆所需的电能随着掺杂浓度的提高而减小，但与电压值、电容值、药剂种类无关；发生电爆所需的时间随着电容值、电压值、掺杂浓度提高而缩短；等离子体加热时间和能量随着电容值、电压值、掺杂浓度提高而增大。更多还原

【Abstract】 In order to obtain the relationship between the characteristic parameters and the design parameters of the micro-sized semiconductor bridge during electric explosion, a 20μm×50μm×4μm 60°semiconductor bridge was subjected to ignition tests under different doping concentrations, ignition capacitance, ignition voltage and two ignition powders, and the relationship between the above design parameters and the characteristic energy, as well as characteristic time of the semiconductor bridge was obtained. The results show that when the ignition capacitance value of semiconductor bridge increases from 10μF to68μF, the minimum full firing voltage of highly doped semiconductor bridge/lead trinitroresorcinate is 6.23～4.28 V, which is 0.86～1.52V lower than that of low-doped semiconductor bridge; the electric quantity required for semiconductor bridge electric explosion decreases with the increase of doping concentration, but it has nothing to do with voltage value, capacitance value and ignition powder; the time of electric explosion decreases with the increase of capacitance value, voltage value and doping concentration; the plasma heating time and energy increase with the increase of capacitance value, voltage value and doping concentration.更多还原