【摘要】 垂直沟道双扩散金属-氧化层-半导体场效应晶体管(VDMOS)是一类继MOSFET之后发展起来的高效功率开关器件，其沟道长度由外延层的厚度来控制，适合于MOS器件向短沟道尺寸发展，可提高器件的高频性能及工作效率。功率VDMOS晶体管是一类适用于开关应用和线性应用的功率器件，在空间卫星电子系统中具有广阔的应用空间。从功率VDMOS器件结构及基本工作机制入手，梳理了其工作原理，总结了总剂量效应、单粒子效应、位移效应及剂量率效应对VDMOS器件性能的影响，从微观进行机制分析，对抗辐射加固方法进行总结，以提高VDMOS器件的可靠性，为改进抗辐射器件制造工艺及结构设计奠定基础。更多还原

【Abstract】 Vertical channel double diffused metal-oxide-semiconductor field-effect transistors(VDMOS) are a new class of high-efficiency power switching devices developed after MOSFETs. The channel length is controlled by the thickness of the epitaxial layer, so it is suitable for the development of MOS devices to short channel size, so as to improve the high frequency performance and working efficiency of the devices. Power VDMOS transistors is a kind of power device suitable for switching and linear applications, and also has a wide range of applications in space satellite electronic systems. Through starting from the structure and basic working mechanism of power VDMOS devices, the study sorts out the basic working principle of VDMOS devices; summarizes the effects of total dose effect, single particle effect, displacement effect and dose rate effect on the performance of VDMOS devices; analyzes the mechanism from the microscopic point of view; and summarizes the existing anti-radiation hardening methods, so as to provide guidance for improving the reliability of existing VDMOS devices, and lay foundation for improving the manufacturing process and structural design of anti-radiation devices in the future.更多还原