【摘要】 为满足反射式光电编码器的应用需求，设计一款集成光电二极管阵列、跨阻放大器、全差分放大器以及偏置电路的光电芯片。首先，根据反射式编码器的成像原理设计光电二极管阵列。然后，设计可调增益跨阻放大器、全差分驱动放大器级联作为增量信号处理链路，降低读出信号的噪声同时提高带负载能力。接着，集成具有宽电源电压输入范围以及较好的电源纹波抑制能力的偏置电路。基于0.35μm光电CMOS工艺进行流片，通过搭建测试环境，光电集成芯片可以在3.5～6 V宽电源电压范围内正常工作，且在电机转速6 000 r/min内输出的增量信号正交性良好。角度测量结果表明，正反转情况下角度测量误差最大值分别为4.752″和5.04″。在5 V供电电压下电路的直流功耗为66.5 mW，整体芯片面积为5.91 mm×2.81 mm。能够满足光电芯片高度集成化、较好的信号正交性、宽电源电压输入范围、高电源纹波抑制能力等要求，适用于反射式光电编码器。更多还原

【Abstract】 This study designed an optoelectronic chip, integrating a photodiode array, transimpedance amplifier, fully differential amplifier, and bias circuit, to meet the application requirements of reflective photoelectric encoders. First, the photodiode array was designed according to the imaging principle of the reflective encoder. The adjustable gain transimpedance amplifier and the fully differential driver amplifier were then cascaded. Regarding the signal processing circuit, it could increase load capacity in addition to reducing the noise of the readout signal. Subsequently, the design integrated the bias circuit to provide a wide power supply voltage input range and effective power supply ripple rejection. The whole chip was fabricated based on a 0. 35-um photoelectric CMOS process. By building a test environment, the photoelectric chip can work normally in the wide power supply voltage range of 3. 5-6 V, and the incremental signal output within 6000 r/min has good orthogonality. The results of angle measurement showed that the maximum error of angle measurement is 4. 752″ and 5. 04″ under forward and reverse rotations, respectively.Using a 5 V supply voltage, the DC power consumption of the circuit is 66. 5 mW. The overall chip area is 5. 91 mm×2. 81 mm. In general, the proposed optoelectronic chip can meet the requirements of high integration of photoelectric chips, good signal orthogonality, wide power supply voltage input range, and high power supply ripple suppression ability. Therefore, it is suitable for reflective photoelectric encoders.更多还原