【摘要】 为满足新型雷达对千瓦级大功率放大器的需求，采用0.25μm GaN HEMT工艺研制了一款输出功率大于2 000 W的X波段内匹配功率放大器。通过背势垒层结构与双场板结构提高器件击穿电压，使GaN HEMT管芯的工作电压达到60 V。通过负载牵引得到管芯最优阻抗，采用T型匹配网络和功率分配/合成器将管芯阻抗匹配到50Ω。在工作电压60 V、占空比1‰、脉宽5μs测试条件下，9.0～9.4 GHz频段内输出功率大于2 000 W，最大功率密度达到10.4 W/mm，功率增益大于7 dB，功率附加效率大于37.2%。更多还原

【Abstract】 Based on the demand for the amplifier with power higher than kilowatt in new type radar, an X-band GaN internally matched power amplifier with output power higher than 2 000 W was presented, which was fabricated by 0.25 μm GaN HEMT technology. The GaN HEMT chip operating at 60 V voltage was developed,whose breakdown voltage improved by using back-barrier layer structure and dual field-plate structure. The optimal matching impedance of the chip was found by loadpull simulation. With the combination of T-shaped matched network and power divider/combiner, the matching impedance of the chip was transformed to standard 50 Ω. Under the operating voltage of 60 V and the pulse condition(1‰ duty cycle and 5 μs pulse width), the output power is higher than 2 000 W, the maximum power density is 10.4 W/mm, the power gain is more than 7 dB, the power added efficiency is higher than 37.2% from 9.0 GHz to 9.4 GHz.更多还原