【摘要】 本文通过在发光二极管(light emitting diode, LED)的p掺杂区域引入六方氮化硼(hexagonal boron nitride, h-BN)结构，以提升深紫外(deep ultraviolet, DUV)LED的空穴浓度。通过COMSOL有限元软件对LED器件量子阱区域建模，结果表明：1)掺入h-BN后，p区域空穴浓度提升了约一个数量级，发射率和内量子效率(inernal quantum efficiency, IQE)得到了显著提升；2)随着h-BN厚度的增加，p区空穴浓度显著提升；3)h-BN相对于AlGaN材料带隙上移的特性，有效地阻挡了电子泄露，使量子阱区域电子和空穴复合进一步增强，有效改善了DUV LED的发光效率。本文提出的设计结构为实验制备高量子效率的DUV LED器件提供了解决方案。更多还原

【Abstract】 In this paper, the hole concentration in deep ultraviolet(DUV) light emitting diode(LED) is effectively improved by introducing hexagonal boron nitride(h-BN) structure in p-type region of LED.The quantum well region is calculated by COMSOL software.The simulation results show that: 1) the hole concentration in the p-type region is increased by about an order of magnitude, and the emissivity and internal quantum efficiency(IQE) are also significantly improved after h-BN doping; 2) the hole concentration in the p-type region increases significantly with the increment of h-BN thickness; 3) as the band edge of h-BN moves upwards with respect to that of AlGaN material, this unique band gap arrangement effectively blocks electron leakage, hence, further enhances the recombination of electrons and holes in the quantum well region, and effectively improves the luminous efficiency of DVU LED.The proposed structure may shed light on the improvement of hole concentration and quantum efficiency of DVU LED.更多还原