【摘要】 根据高功率脉冲电源在溅射时能提升离化率，增加离子浓度的特点，研究了高功率脉冲电源的峰值电流、频率、脉宽与离化效果之间的关系，并比对了溅射效果，分析了高功率脉冲与偏压电源之间的作用关系。通过这些关键工艺的研究，成功实现了深径比10∶1的微孔溅射金属化并进行工程应用，为三维集成高深径比微孔金属化提供了一种低成本的解决方案。更多还原

【Abstract】 According to the characteristics of high ionization rate and ion concentration of the high power pulse during the sputtering, the relationship between the peak current, frequency and pulse width of the high power pulse power supply and the ionization effect was studied and the sputtering effect was compared. The relationship between the high power pulse and the bias field was analyzed. The metallization of the micro deep hole with the depth to diameter ratio of 10∶1 by sputtering was successfully realized and applied, which provided a low-cost solution for the metallization of three-dimensional integrated micro deep hole with high ratio of depth to diameter.更多还原