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高储能密度铁酸铋基无铅铁电陶瓷研究进展

Research progress in BiFeO3-based lead-free ceramics for high energy storage density

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【作者】 郭慧涛范桂芬曾芳芳陈宇鑫吕文中

【Author】 GUO Huitao;FAN Guifen;ZENG Fangfang;CHEN Yuxin;LYU Wenzhong;School of Optical and Electronic Information, Huazhong University of Science and Technology;Wenzhou Advanced Manufacturing Institute;

【通讯作者】 范桂芬;

【机构】 华中科技大学光学与电子信息学院温州先进制造技术研究院

【摘要】 电介质电容器因其充放电快、功率密度高的独特优势而在脉冲电源系统和各类电子设备中得到了广泛应用。目前商用高功率固态电容器主要使用陶瓷介质作为储能材料,其中铁电陶瓷因其高储能密度而在近年来受到了学者的关注。然而普通铁电体高的剩余极化强度阻碍了其储能密度的提升。铁酸铋基铁电体拥有高自发极化强度和高剩余极化强度,通过诱导弛豫态可有效降低其剩余极化强度而保持较大的自发极化强度,并解决击穿场强与极化强度之间的制约关系,从而实现优异的储能性能。首先概述了介质储能材料的主要性能参数以及铁酸铋无铅铁电陶瓷作为铁电储能材料的特性与优势,其次对不同形态的铁酸铋基铁电材料储能性能的调控思路及研究进展进行了综述,最后总结了该体系提升储能性能的方法和未来的发展趋势。

【Abstract】 Dielectric capacitors are widely used in pulse power systems and electronics owing to their ultrafast charge/discharge rate and giant power density. Currently, commercially available solid-state capacitors for high-power applications are dominated by ceramics. Particularly, ferroelectric ceramics have attracted much attention in recent years due to their high energy storage density. However, high remanent polarization of ferroelectrics hampers further enhancement of energy density. Bismuth ferrite-based ferroelectrics possess high spontaneous polarization and high remanent polarization. By inducing a relaxor state or domain engineering, the remanent polarization of the bismuth ferrite-based ferroelectrics will reduce while maintaining high spontaneous polarization. Besides, the compromise between breakdown strength and polarization can be achieved to obtain favorable performance. Here the main parameters of energy storage dielectrics are summarized, including the characteristics and advantages of bismuth ferrite. Then it reviews the corresponding research results and the ideas using different thicknesses. Finally, the approaches to improving the performance of the bismuth ferrite system are concluded, and the development is prospected.

【基金】 国家自然科学基金(52176072);湖北省重点研发计划重点项目(2021BCA140);教育部装备预研联合基金(8091B022124)
  • 【文献出处】 电子元件与材料 ,Electronic Components and Materials , 编辑部邮箱 ,2023年01期
  • 【分类号】TM53;TQ174.1
  • 【下载频次】198
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