【摘要】 以GaN为代表的新一代半导体材料具有宽禁带、高电子饱和速率、高击穿场强等优异的电学性能，使得射频、电力电子器件有了具备更高功率能力的可能，目前限制器件功率提升的主要瓶颈是缺少与之匹配的散热手段。具有极高热导率的金刚石已成为提升器件散热能力的重要材料，学术界针对金刚石与功率器件集成的先进热管理技术已经开展了大量有益的研究与探索，但是由于金刚石具有极强的化学惰性和超高的硬度，在实际集成和工艺加工过程中，金刚石-GaN界面容易出现热性能和可靠性问题，甚至会导致器件失效。对金刚石热管理技术的研究进展和存在的问题进行了深入分析，并对未来主要工作方向做了展望。更多还原

【Abstract】 The new generation of semiconductor materials represented by GaN have excellent electrical properties, including large bandgap, high electron saturation rate and high breakdown electric field, making it possible for RF and power electronic devices to have better power performance. More efficient cooling techniques are needed to ensure the power performance of the devices. Diamond has become an ideal heat spreader because of its high thermal conduction, and a lot of useful studies and explorations have been carried out in academic circle for the advanced thermal management technology of diamond and power device integration. But due to the strong chemical inertness and ultra-high hardness of diamond, in the actual integration and processing process, it is easy to cause the diamond-GaN interface thermal performance and reliability problems, which can even lead to device failure. The research progress and problems of diamond-based thermal management technology are analyzed deeply, and an outlook on future work is provided.更多还原