【摘要】 基于平面应变问题结合有限元H法,分析了励磁情形下缺陷形状、尺寸及位置对超导体感应电流密度、磁场和应力的影响。结果表明:相对于无缺陷超导体,含缺陷时能显著提高超导体的磁通俘获能力;降磁阶段超导体受到更大的拉应力,容易出现径向裂纹和损伤破坏;缺陷位置通过改变再磁化边缘位置影响电流密度分布规律;超导体含缺陷时,缺陷位置的应力集中与电流密度存在正向相关性,应力集中程度越大,电流密度越大;当圆孔缺陷位于超导体中心且缺陷半径小于0.2R时,随着缺陷半径增大径向应力和环向应力变化速率加快。更多还原

【Abstract】 Based on the plane strain problem combined with the finite element method H, the influence of the shape, size and location of the defect on the induced current density, magnetic field and stress of the superconductor under excitation condition is analyzed. The results show that the magnetic flux trapping capacity of the superconductor with defects can be significantly improved compared with the superconductor without defects. The superconductor is subjected to greater tensile stress and is prone to radial cracks and damage. The location of the defect affects the current density distribution by changing the position of the remagnetization edge. When the superconductor contains defects, the stress concentration at the defect location is positively correlated with the current density. The higher the stress concentration, the higher the current density.When the circular hole is located in the center of the superconductor and the defect radius is less than 0. 2R, the change rate of radial stress and circumferential stress increases with the increase of defect radius.更多还原