【摘要】 随着人工智能技术的不断发展，宽禁带半导体——氮化镓(GaN)引起研究者们越来越多的关注。但受限于大尺寸、低位错密度的GaN单晶衬底难以制备且稀缺，GaN材料的制备通常采用异质外延法，相较于碳化硅(SiC)、蓝宝石等异质衬底，硅(Si)衬底Ga N材料具有更高的性价比，在功率转换和通讯方面受到广泛的关注。但是Si衬底上制备GaN单晶薄膜是典型的大失配异质外延，由此导致的高位错密和应力问题严重制约Si衬底GaN材料的性能及发展。该文从缓冲层技术、图形化衬底技术和柔性衬底技术3个方面，对硅衬底氮化镓大失配应力调控方法进行研究，提出优点与不足，在总结前人在以上3个方面取得进展的基础上，对硅衬底氮化镓大失配应力调控方法的发展做展望。更多还原

【Abstract】 With the continuous development of artificial intelligence technology, gallium nitride(GaN), a wide bandgap semiconductor, has attracted increasing attention from researchers. However, due to the difficulty and scarcity of large-size and low dislocation density GaN single crystal substrates, Ga N materials are usually prepared by heteroepitaxy. Compared with silicon carbide(SiC), sapphire and other heterogenous substrates, silicon(Si) substrated GaN materials have higher cost performance, and have attracted wide attention in power conversion and communication. However, the preparation of GaN single crystal thin film on Si substrate is a typical large mismatch heteroepitaxy, which leads to high dislocation density and stress problems that seriously restrict the performance and development of GaN materials on Si substrate. From three aspects: buffer layer technology, patterned substrate technology and flexible substrate technology, this paper studies the control methods of large mismatch stress of gallium nitride on silicon substrate, and points out the advantages and disadvantages. On the basis of summarizing the previous achievements in the above three aspects, the development of the control methods of gallium nitride large mismatch stress on silicon substrate is prospected.更多还原