【摘要】 采用磁控溅射工艺制备NiFe合金薄膜，通过电子束蒸发制备Barber电极，获得了各向异性磁电阻(AMR)线性磁场传感器。通过材料芯片技术，系统研究了图形化的NiFe薄膜宽度、厚度以及Barber电极角度、间距等因素对传感器性能的影响。测试结果表明，在设计的工艺条件下，NiFe薄膜宽度为36μm、厚度为28 nm、Barber电极角度为40°以及电极间距为10μm时，该磁场传感器在磁场范围为±5 G内灵敏度最大，达到1.17 mV/(V·G)。研究工作为进一步发展基于AMR效应的角度及磁场传感器芯片提供参考。更多还原

【Abstract】 Using NiFe alloy thin film prepared by magnetron sputtering process and Barber-pole prepared by electron beam evaporation process, the magnetic sensor based on anisotropic magnetoresistance(AMR) effect was realized. Through the material chip technology, the influence of the width and thickness of the patterned NiFe thin film, the angle and distance of the Barber-pole on the output performance of the magnetic sensor were systematically analyzed. The results show that,the sensor features a maximum sensitivity 1.17 mV/(V·G) within a magnetic field range of ±5 G with NiFe film width of 36μm and thickness of 28 nm, barber-pole angle of 40°, and electrode spacing of 10 μm. The research work provides a reference for the further development of angle and magnetic field sensor chips based on the AMR effect.更多还原