【摘要】 为了提高晶圆中硅通孔(TSV)阻挡层材料化学机械抛光(CMP)中Ta和Cu的去除速率选择比,在工作压力为3 psi (1 psi=6 895 Pa)、抛光头转速为87 r/min、抛光盘转速为93 r/min、抛光液体积流量为300 m L/min的条件下,研究了氨基三甲叉膦酸(ATMP)作为络合剂对Ta和Cu的去除速率以及去除速率选择比的影响。通过电化学方法探究了ATMP对Ta和Cu的络合机制,利用原子力显微镜对比了抛光前后的表面质量。研究结果显示:在ATMP质量分数为1.5%时,Ta和Cu的去除速率分别为157.96和58.6 nm/min,验证了ATMP对提高Ta和Cu的去除速率选择比具有明显效果,Ta和Cu抛光前后的表面粗糙度分别由4.2 nm降低至0.284 nm以及由1.31 nm降低至0.51 nm,表面质量得到明显改善,证明了ATMP适合用于TSV晶圆阻挡层材料抛光。更多还原

【Abstract】 To improve the removal rate selection ratio of Ta and Cu in chemical mechanical polishing(CMP) of barrier layer materials of through silicon via(TSV) in wafer, the effects of amino trimethylene phosphonic acid(ATMP) as a complexing agent on the removal rate and removal rate selection ratio of Ta and Cu were investigated under the conditions of working pressure of 3 psi(1 psi=6 895 Pa), polishing head speed of 87 r/min, polishing pad speed of 93 r/min and polishing solution volume flow of 300 m L/min. The complexation mechanism of ATMP to Ta and Cu was investigated by electrochemical method, and the surface qualities before and after polishing were compared by atomic force microscope. The research results show that when the mass fraction of ATMP is 1.5%, the removal rates of Ta and Cu are 157.96 and 58.6 nm/min, respectively, which proves that ATMP has obvious effect on improving the removal rate selection ratio of Ta and Cu. The surface roughnesses of Ta and Cu before and after polishing reduce from 4.2 nm to 0.284 nm and from 1.31 nm to 0.51 nm, respectively.The surface quality is obviously improved,which proves that ATMP is suitable for polishing TSV wafer barrier layer materials.更多还原