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TSV铜抛光液的研究进展

Research Progress of TSV Copper Polishing Liquid

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【作者】 王帅; 王如; 郑晴平; 刘彬;

【Author】 Wang Shuai;Wang Ru;Zheng Qingping;Liu Bin;School of Electronics and Information Engineering, Hebei University of Technology;Tianjin Key Laboratory of Electronic Materials and Devices;

【通讯作者】 王如;

【机构】 河北工业大学电子信息工程学院; 天津市电子材料与器件重点实验室;

【摘要】 对硅通孔技术(TSV)在3D堆叠封装领域的优势进行了简单阐述,同时指出化学机械抛光(CMP)技术作为具有高质量和高精度的全局平坦化工艺,是TSV制备过程中最重要的步骤之一。影响化学机械抛光质量以及效率的因素有很多,其中比较关键的是化学机械抛光液的组成成分及其性能。重点从抛光速率、抛光质量(抑制碟形坑、表面粗糙度等)和绿色环保几个方面对抛光液性能的影响进行了讨论,概述了近年来国内外铜抛光液的研究进展。最后,通过对比总结目前铜抛光液的研究成果,对TSV铜抛光液今后的研究重点和发展趋势进行了分析和预测,其应朝着抛光速率和抛光质量的优化、低成本及环境友好的方向发展。

【Abstract】 The advantages of through-silicon vias(TSV) in the field of 3D stacked packaging are briefly explained, and it is pointed out that chemical mechanical polishing(CMP), as a high-quality and high-precision global planarization process, is one of the most important steps in the TSV manufacturing process. There are many factors that affect the quality and efficiency of CMP, among which the composition and performances of the CMP slurry are more critical. The influences of the polishing rate, polishing quality(inhibition of dish-shaped pits, surface roughness, etc.), and environmental protection on the performances of the polishing slurry are emphatically discussed, and the research progress of the copper polishing slurry at home and abroad in recent years is summarized. Finally, by comparing and summarizing the current research results of the copper polishing slurry, the research focus and development trend of the TSV copper polishing slurry in the future are analyzed and predicted, which should be developed in the direction of optimization of polishing rate and polishing quality, low cost and environmental friendliness.

【基金】 国家自然科学基金资助项目(61504037);河北省自然科学基金资助项目(F2015202267)
  • 【文献出处】 微纳电子技术 ,Micronanoelectronic Technology , 编辑部邮箱 ,2023年01期
  • 【分类号】TQ421;TN405
  • 【下载频次】39
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