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不同凝固条件下共晶Si生长界面稳定性及分枝生长
Interfacial Stability and Branch Growth of Eutectic Si Under Different Solidification Conditions
【摘要】 通过OM、SEM、EBSD等技术分析了不同凝固条件下共晶Si的生长行为。结果表明:共晶Si存在从平界面→胞状晶→树枝晶的转变过程。同一个共晶(团)晶粒的Si相和α相都不是单晶体。Al、Si两相共生生长过程中,共晶α可通过重复形核、亚晶界以及小角度晶界来调整生长位向以满足两相耦合生长的要求。
【Abstract】 The growth behavior of eutectic Si under different solidification conditions was analyzed by using of OM, SEM, and EBSD. The results show that the eutectic Si has a transformation process from flat interface→cellular crystal→dendritic crystal. The Si phase and α phase in the same grain are not single crystals. During the co-growth process of Al and Si, eutectic α can adjust its growth position to meet the requirements of two-phase coupling growth by repeating nucleation, sub-grain boundary and small-angle grain boundary.
【关键词】 共晶Si;
胞状晶;
树枝晶;
耦合生长;
【Key words】 eutectic Si; cellular crystal; dendritic crystal; coupling growth;
【Key words】 eutectic Si; cellular crystal; dendritic crystal; coupling growth;
【基金】 2022年度国家外国专家项目(G2022014146L);2022年度江苏省高校基础科学(自然科学面上项目(22KJD430011);江苏省产学研合作项目(BY2022482,2021HX-67);2019校级自然科学基金项目(ygy2019-04)
- 【文献出处】 铸造 ,Foundry , 编辑部邮箱 ,2022年09期
- 【分类号】TG146.21
- 【下载频次】46