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钛镓掺杂氧化锌透明半导体薄膜的光电性能研究(英文)

Optical and electrical performance of titanium-gallium-zinc oxide transparent semiconductor thin films

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【作者】 顾锦华; 万鑫; 龙浩; 陈首部; 钟志有;

【Author】 GU Jinhua;WAN Xin;LONG Hao;CHEN Shoubu;ZHONG Zhiyou;Experimental Teaching and Engineering Training Center,South-Central Minzu University;Hubei Key Laboratory of Intelligent Wireless Communications,South-Central Minzu University;College of Electronic Information Engineering,South-Central Minzu University;

【通讯作者】 钟志有;

【机构】 中南民族大学实验教学与工程训练中心; 中南民族大学智能无线通信湖北省重点实验室; 中南民族大学电子信息工程学院;

【摘要】 以玻璃作为衬底,采用射频磁控溅射技术,制备了钛镓掺杂氧化锌(TiGaZnO)透明半导体薄膜,通过紫外-可见分光光度计和霍耳效应测试系统表征,研究了沉积气压对样品光学和电学性能的影响。结果表明:所有薄膜样品在可见光波段都具有良好的透光性,其可见光平均透射率均高于81.0%。同时沉积气压对薄膜光学和电学性能也具有明显的影响,当沉积气压为0.4 Pa时,TiGaZnO薄膜具有相对高的品质因数(4.034×103Ω-1·cm-1)和低的电阻率(1.685×10-3Ω·cm),其光电综合性能较好。

【Abstract】 The transparent semiconductor thin films of titanium-gallium-zinc oxide(TiGaZnO)were prepared on glass substrates by magnetron sputtering.The effects of deposition pressure on optical and electrical characteristics were studied by UV-Vis spectrophotometer and Hall-effect measurement system.The results demonstrate that all the prepared samples possess high transparency in the visible light region.The average transmittance in the visible range exceeds 81.0%for all the prepared samples regardless of the deposition pressure.The deposition pressure has a significant impact on the optical and electrical characteristics of the prepared samples.The thin film fabricated at deposition pressure of 0.4 Pa has relatively better optoelectronic performance,with a high figure of merit of 4.034×103Ω-1·cm-1and low resistivity of 1.685×10-3Ω·cm.

【基金】 国家自然科学基金资助项目(12075322);教育部产学合作协同育人项目(202101144002,202101352053,202101352054);中南民族大学实验室研究项目(SYYJ2022008)
  • 【文献出处】 中南民族大学学报(自然科学版) ,Journal of South-Central Minzu University(Natural Science Edition) , 编辑部邮箱 ,2022年06期
  • 【分类号】TN304.055;TB383.2
  • 【下载频次】91
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