节点文献
Relationship between the spatial position of the seed and growth mode for single-crystal diamond grown with an enclosed-type holder
【摘要】 The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosedtype holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method.The results demonstrate that there are three main regions by varying the spatial position of the seed. Due to the plasma concentration occurring at the seed edge, a larger depth is beneficial to transfer the plasma to the holder surface and suppress the polycrystalline diamond rim around the seed edge. However, the plasma density at the edge decreases drastically when the depth is too large, resulting in the growth of a vicinal grain plane and the reduction of surface area. By adopting an appropriate spatial location, the size of single-crystal diamond can be increased from 7 mm × 7 mm × 0.35 mm to8.6 mm × 8.6 mm × 2.8 mm without the polycrystalline diamond rim.
【Abstract】 The relationship between the spatial position of the diamond seed and growth mode is investigated with an enclosedtype holder for single-crystal diamond growth using the microwave plasma chemical vapor deposition epitaxial method.The results demonstrate that there are three main regions by varying the spatial position of the seed. Due to the plasma concentration occurring at the seed edge, a larger depth is beneficial to transfer the plasma to the holder surface and suppress the polycrystalline diamond rim around the seed edge. However, the plasma density at the edge decreases drastically when the depth is too large, resulting in the growth of a vicinal grain plane and the reduction of surface area. By adopting an appropriate spatial location, the size of single-crystal diamond can be increased from 7 mm × 7 mm × 0.35 mm to8.6 mm × 8.6 mm × 2.8 mm without the polycrystalline diamond rim.
【Key words】 MPCVD; single-crystal diamond growth; enclosed-type holder; growth mode modulation;
- 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2022年10期
- 【分类号】TQ163
- 【下载频次】2