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Spin transport in epitaxial Fe3O4/GaAs lateral structured devices

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【作者】 黄兆聪； 刘文卿； 梁健； 郭庆杰； 翟亚； 徐永兵；

【Author】 Zhaocong Huang;Wenqing Liu;Jian Liang;Qingjie Guo;Ya Zhai;Yongbing Xu;School of Physics, Southeast University;Spintronics and Nanodevice Laboratory, Department of Electronics, University of York;York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University;Department of Electronic Engineering, Royal Holloway University of London;

【通讯作者】 翟亚;徐永兵;

【机构】 School of Physics, Southeast University； Spintronics and Nanodevice Laboratory, Department of Electronics, University of York； York-Nanjing Joint Center in Spintronics, School of Electronic Science and Engineering, Nanjing University； Department of Electronic Engineering, Royal Holloway University of London；

【摘要】 Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor（SFET）, which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.

【Abstract】 Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor（SFET）, which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias dependence. Understanding the spin-dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFETs.

【关键词】 spin field-effect transistor； spin injection and detection； half metal； magnetoresistance；
【Key words】 spin field-effect transistor； spin injection and detection； half metal； magnetoresistance；
【基金】 supported by the National Key Research and Development Program of China (Grant No. 2017YFA0204800);the National Natural Science Foundation of China (Grant Nos. 52071079 and 11504047)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2022年06期
  • 【分类号】TN386;O469
  • 【下载频次】12
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