DC and analog/RF performance of C-shaped pocket TFET(CSP-TFET) with fully overlapping gate

【摘要】 A C-shaped pocket tunnel field effect transistor（CSP-TFET） has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current（Ion）, on/off current ratio（Ion/Ioff）, subthreshold swing（SS） transconductance（g_m）, cut-off frequency（ f_T） and gain–bandwidth product（GBP） are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on(9.98×10^-4 A/μm), high I_on/I_off(～ 10¹¹), as well as low SS（～ 12 m V/dec）. The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.更多还原

【Abstract】 A C-shaped pocket tunnel field effect transistor（CSP-TFET） has been designed and optimized based on the traditional double-gate TFETs by introducing a C-shaped pocket region between the source and channel to improve the device performance. A gate-to-pocket overlapping structure is also examined in the proposed CSP-TFET to enhance the gate controllability. The effects of the pocket length, pocket doping concentration and gate-to-pocket overlapping structure on the DC and analog/RF characteristics of the CSP-TFET are estimated after calibrating the tunneling model in double-gate TFETs. The DC and analog/RF performance such as on-state current（Ion）, on/off current ratio（Ion/Ioff）, subthreshold swing（SS） transconductance（g_m）, cut-off frequency（ f_T） and gain–bandwidth product（GBP） are investigated. The optimized CSPTFET device exhibits excellent performance with high I_on(9.98×10^-4 A/μm), high I_on/I_off(～ 10¹¹), as well as low SS（～ 12 m V/dec）. The results reveal that the CSP-TFET device could be a potential alternative for the next generation of semiconductor devices.更多还原