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Surface defects, stress evolution, and laser damage enhancement mechanism of fused silica under oxygen-enriched condition

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【作者】 罗韦媛孙文丰黎波向霞蒋晓龙廖威王海军袁晓东蒋晓东祖小涛

【Author】 Wei-Yuan Luo;Wen-Feng Sun;Bo Li;Xia Xiang;Xiao-Long Jiang;Wei Liao;Hai-Jun Wang;Xiao-Dong Yuan;Xiao-Dong Jiang;Xiao-Tao Zu;School of Physics, University of Electronic Science and Technology of China;Research Center of Laser Fusion, China Academy of Engineering Physics;

【通讯作者】 黎波;向霞;

【机构】 School of Physics, University of Electronic Science and Technology of ChinaResearch Center of Laser Fusion, China Academy of Engineering Physics

【摘要】 Oxygen ions(O+) were implanted into fused silica at a fixed fluence of 1 × 1017 ions/cm2 with different ion energies ranging from 10 ke V to 60 ke V. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects(ODCs and E′centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si–O–Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to30 ke V. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si–O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.

【Abstract】 Oxygen ions(O+) were implanted into fused silica at a fixed fluence of 1 × 1017 ions/cm2 with different ion energies ranging from 10 ke V to 60 ke V. The surface roughness, optical properties, mechanical properties and laser damage performance of fused silica were investigated to understand the effect of oxygen ion implantation on laser damage resistance of fused silica. The ion implantation accompanied with sputtering effect can passivate the sub-/surface defects to reduce the surface roughness and improve the surface quality slightly. The implanted oxygen ions can combine with the structural defects(ODCs and E′centers) to reduce the defect densities and compensate the loss of oxygen in fused silica surface under laser irradiation. Furthermore, oxygen ion implantation can reduce the Si–O–Si bond angle and densify the surface structure, thus introducing compressive stress in the surface to strengthen the surface of fused silica. Therefore, the laser induced damage threshold of fused silica increases and the damage growth coefficient decreases when ion energy up to30 ke V. However, at higher ion energy, the sputtering effect is weakened and implantation becomes dominant, which leads to the surface roughness increase slightly. In addition, excessive energy aggravates the breaking of Si–O bonds. At the same time, the density of structural defects increases and the compressive stress decreases. These will degrade the laser laser-damage resistance of fused silica. The results indicate that oxygen ion implantation with appropriate ion energy is helpful to improve the damage resistance capability of fused silica components.

【基金】 Project supported by the National Natural Science Foundation of China (Grant No. 12105037);the Key Project of National Natural Science Foundation of China–China Academy of Engineering Physics Joint Foundation (Grant No. U1830204)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2022年05期
  • 【分类号】TL632;TQ171.731
  • 【下载频次】10
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