【摘要】 为了实现硅基雪崩光电二极管蓝光波段（400～500 nm）高光响应度，设计了SACM型基本器件结构，探究了倍增层厚度对器件的雪崩击穿电压及光电流增益的影响及倍增层掺杂浓度对光响应度的影响，综合考虑光响应度和击穿电压的因素，结果表明：当表面非耗尽层掺杂浓度为1.0×10¹⁸ cm^-3、厚度为0.03μm；吸收层掺杂浓度为1.0×10¹⁵ cm^-3、厚度为1.3μm；场控层掺杂浓度为8.0×10¹⁶ cm^-3、厚度为0.2μm；倍增层掺杂浓度为1.8×10¹⁶ cm^-3、厚度为0.5μm时，器件具有较低的击穿电压V_br-apd=34.2 V。当V_apd=0.95 V_br-apd，该结构在蓝光波段具较高的光响应度(SR=3.72～6.08 A·W^-1)。上述研究结果对高蓝光探测响应度Si-APD实际器件的制备具有一定的参考价值。更多还原

【Abstract】 In order to achieve high spectral responsivity of the silicon avalanche photodiode in blue band（400-500 nm）, Separated Absorption Control Multiplication（SACM） basic device structure was designed.Based on multiple physical models, the effect of the thickness on the avalanche breakdown voltage and the photocurrent gain of the device and the effect of the doping concentration of the multiplication layer on the optical responsivity were investigated. Comprehensively considering the factors of light responsivity and breakdown voltage, the results show that the device has a low breakdown voltage V_br-apd=34.2 V when the doping concentration of the surface non-depleted layer is 1.0×10¹⁸ cm^-3, and the thickness is 0.03 μm; the doping concentration of absorption layer is 1.0×10¹⁵ cm^-3, the thickness is 1.3 μm, the doping concentration of field control layer is 8.0×10¹⁶ cm^-3, the thickness is 0.2 μm and the doping concentration of double layer is1.8×10¹⁶ cm^-3 and the thickness is 0.5 μm. When V_apd=0.95 V_br-apd, it has higher optical responsivity in blue band, i.e. SR is 3.72～6.08 A·W^-1. The above research results provide certain theoretical reference for the preparation of practical Si-APD devices with high blue light detection responsivity.更多还原