【摘要】 铌酸锂薄膜调制器具有体积小、带宽高、半波电压低的优点，在光纤通讯和光纤传感领域具有重要应用价值，是近年来的研究热点。本文梳理了铌酸锂薄膜调制器的波导结构、耦合结构、电极结构的研究进展，总结了LN薄膜波导的制备工艺，并深入分析了不同结构调制器的性能。基于SOI和LNOI结构，薄膜调制器实现了V_πL<2 V·cm，双锥形耦合方案实现了耦合损耗<0.5 dB/facet，行波电极结构实现了调制带宽>100 GHz。铌酸锂薄膜调制器的性能在大多数方面优于目前商用铌酸锂调制器，随着波导工艺进一步提升，将成为铌酸锂调制器的热门方案。最后对铌酸锂薄膜调制器的发展趋势和应用前景进行了展望。更多还原

【Abstract】 Electro-optic modulators based on lithium niobate（LiNbO₃, LN） thin-film platforms are advantageous for their small volume, high bandwidth and low half-wave voltage. They have important application prospects in the field of optical fiber communication and optical fiber sensing, and thus have became a heavily researched topic in recent years. In this paper, the research progress of the waveguide structures, coupling structures and electrode structures of LN thin-film modulators are reviewed in detail. The fabrication process of a LN thin-film waveguide is summarized, and the performances of different modulator structures are analyzed. Based on SOI and LNOI, a platform modulator is realized with V_πL<2 V·cm, a bilayer inversely tapered coupling scheme achieves a coupling loss <0.5 dB/facet, and a traveling wave electrode structure achieves a modulation bandwidth >100 GHz. Thin-film LN modulators are better than commercial LN modulators in most aspects. It can be predicted that in the near future, with the further improvement in waveguide technology, thin-film LN will become a popular scheme of LN modulators. Finally, the potential directions for the future of their research are proposed.更多还原