【摘要】 以180 nm工艺钳位光电二极管(PPD)像素结构的互补金属氧化物半导体(CMOS)图像传感器(CIS)为研究对象，通过开展CIS像素单元的器件物理建模、中子辐照损伤效应建模，分别仿真模拟了不同中子辐照注量、不同积分时间、不同缺陷类型条件下，中子位移辐照损伤诱发CIS暗信号和电荷转移损失(CTI)的退化规律。仿真模拟结果表明：暗信号和CTI均随中子辐照注量增大而增大，在达到饱和阈值之前，均呈近似线性关系；在相同的中子辐照注量下，积分时间越长，暗信号越大，CTI越小；多空位中心(E_c-0.46 eV)、双空位中心(E_c-0.42 eV)、C_i-O_i中心(E_V+0.36 eV)3种不同体缺陷对暗信号和CTI退化的影响程度不同，E_c-0.46 eV是诱发暗信号和CTI退化的主要因素。仿真模拟的变化趋势与辐照实验测试的变化趋势相吻合。该仿真模拟研究为深入揭示CIS中子位移辐照损伤效应机理及抗辐射加固技术研究提供了理论依据。更多还原

【Abstract】 In this paper, a model of the physical device of the pinned photodiode(PPD) CMOS image sensors(CIS) manufactured with 180 nm technology is built. The model of the neutron irradiation effects in PPD CIS is also built to simulate the dark signal and charge transfer inefficiency(CTI) degradation at different neutron fluence, integration time, and bulk traps. The simulation results show that the dark signal and CTI increase with the increase of neutron fluence, and they are approximately linear before reaching the saturation threshold. At the same neutron fluence, the longer of the integration time is, the larger of the dark signal and the smaller of the CTI. The influences of three types of bulk traps such as multi-vacancy center(E_c-0.46 eV), divacancy center(E_c-0.42 eV), and C_i-O_i center(E_V+0.36 eV) on dark signal and CTI degradation are different. E_c-0.46 eV is the dominated factor inducing dark signal and CTI degradation. The change trend of the simulation results is consistent with that of the radiation experimental results. The simulation researches provide a theoretied basis for the neutron displacement damage mechanism and radiation hardening research.更多还原