【摘要】 采用射频磁控溅射方法在玻璃和Si (111)衬底上制备了碲化镉(CdTe)薄膜，并研究了溅射功率对薄膜的结构、光学和电学性能的影响.X射线衍射分析表明，所有样品均沿(111)面择优取向；平均晶粒尺寸随溅射功率的增加而增加，即从73.0 nm (70 W)增加到123.6 nm (110 W).紫外-可见-近红外光谱分析表明，CdTe薄膜在可见光范围内具有较高的吸光度；薄膜的带隙随着溅射功率的增加而减小，最小值为1.38 eV.CdTe薄膜的导电性随溅射功率的增加而明显增强，当溅射功率为110 W时电阻率仅为21.5Ω·cm.该研究结果可为制备高导电性和高吸收率的半导体薄膜提供参考.更多还原

【Abstract】 The cadmium telluride(CdTe) films have been deposited on glass and Si(111) substrates by radio frequency(RF) magnetron sputtering, and the influences of sputtering power on the structural, optical and electrical properties of the films are investigated in this paper.The X-ray diffraction patterns reveal that all films exhibit a preferred orientation along the(111) plane.With the raise of sputtering power from 70 W to 110 W, the average grain size increased from 73.0 nm to 123.6 nm.The UV-Vis-NIR spectroscopy analysis shows that the CdTe films have high absorbance in the visible range.The bandgap of the films reduces gradually with the increase of sputtering power, and the minimum value is 1.38 ev.The conductivity of CdTe films enhances obviously with the rise of sputtering power.When the sputtering power is 110 W, the lowest resistivity is 21.5 Ω·cm. The research results can provide a reference for the preparation of semiconductor films with high conductivity and high absorptivity.更多还原