【摘要】 信息社会的迅猛发展极大推动了对高性能计算的需求。而先进互补金属氧化物半导体（CMOS）制造工艺是制造高性能计算芯片的保障，因此成为世界顶尖设计公司和芯片制造企业竞争的技术高地。文章概述了鳍式场效应晶体管（FinFET）之后技术演进到环栅场效应晶体管（GAAFET）的必然性，以及在工艺模块、系统集成和工艺无损表征上带来的挑战。在先进CMOS制造工艺技术的创新上，需要有从器件开发到系统设计的思维转变；设计工艺协同优化（DTCO）将会发挥越来越重要的作用。面向未来国产先进的CMOS制造工艺的发展，在技术开发和人才培养方面提出了发展建议和举措。更多还原

【Abstract】 The rapid development of information society has greatly promoted the demand for high-performance computing(HPC), and advanced complementary metal oxide semi-conductor(CMOS) technology ensures the manufacturing of HPC chips. As a result, the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world. This paper reviews the necessity of a Fin field-effect transistor(FinFET) evolving into a gate-all-around field-effect transistor(GAAFET) and analyzes challenges in technological modules, system integration, and non-destructive technological characterization. It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design, and design technology co-optimization(DTCO) will become increasingly important. In addition, the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.更多还原