【摘要】 设计了一种适用于GaN栅驱动的高速、高共模瞬态抗扰度的电平位移电路。电路受PWM信号和短脉冲协同控制，利用短脉冲控制的加速电路提升了电平转换速度。在浮动电源轨高速切换和减幅振荡过程中，电路内部对地寄生电容的充放电会导致输出逻辑错误。针对此问题，采用一种高速、低功耗的交叉控制式噪声屏蔽电路，实现了极高的共模瞬态抗扰度。采用0.35μm高压CMOS工艺进行电路设计。仿真结果表明，在100 V电平转换情况下，该电平位移电路的平均传输延时为1.58 ns,延时失配小于100 ps,共模瞬态抗扰度达到200 V/ns。更多还原

【Abstract】 A high-speed, high common-mode transient immunity level shifter suitable for GaN drivers is proposed. The proposed circuit was controlled by the PWM signal and the short pulse, and an accelerating circuit controlled by short pulse improved response speed during level shifting. During high dV/dt transitions and ringing period of floating power rails, the charging and discharging of the parasitic capacitance in level shifter caused output logic errors. To solve this problem, a high-speed low-power cross-controlled noise blanker was adopted to realize high common-mode noise immunity. The circuit was designed in a 0.35 μm high-voltage CMOS process. The simulation results show that the average propagation delay of the level shifter is 1.58 ns with the floating ground at 100 V, the delay mismatch is less than 100 ps, and the common-mode transient immunity reaches 200 V/ns.更多还原