【摘要】 对分子束外延（MBE）生长的原位As掺杂HgCdTe外延材料的热退火造成的As扩散控制进行研究。在较低的退火温度下获得了As扩散长度可控的HgCdTe材料，易于形成符合设计参数的PN结轮廓，为后续新型焦平面器件的研发提供基础。研究发现，在热退火过程中，原位As掺杂HgCdTe的As浓度的大小和纵向分布随着不同的Hg分压而发生改变。并通过理论计算获得了不同Hg分压下的As扩散系数。同时，通过数值模拟对不同As扩散长度的P-on-N器件结构进行了暗电流模拟，验证了As掺杂结深推进工艺的重要性。更多还原

【Abstract】 As diffusion control caused by the thermal annealing of in-situ As-doped HgCdTe grown by molecular beam epitaxy(MBE)was studied. HgCdTe with controllable As diffusion length is obtained at a lower annealing temperature,which is easy to form a PN junction profile that meets the design parameters. It provides a basis for the subsequent development of new HgCdTe FPA devices. It is found that the longitudinal distribution of As concentration of the in-situ As-doped HgCdTe changed under different Hg pressures during the thermal annealing process. And through theoretical calculations,As diffusion coefficients under different Hg pressures are obtained. Meanwhile,the dark current simulation of HgCdTe P-on-N structure with different As diffusion lengths was carried out through numerical simulation,which verified the importance of deep-advancing process for As-doped HgCdTe PN junction.更多还原