【摘要】 采用气体源分子束外延（GSMBE）技术，研究了InP衬底上In_yAl_1-yAs线性渐变缓冲层对In_0.66Ga_0.34As/In_yAl_1-yAs高迁移率晶体管（HEMT）材料特性影响。研究了不同厚度和不同铟含量的In_yAl_1-yAs线性渐变缓冲层对材料的表面质量、电子迁移率和二维电子气浓度的影响。结果表明，在300 K（77 K）时，电子迁移率和电子浓度分别为8 570 cm²/（Vs）^-1(23 200 cm2/（Vs）^-1)3.255E12 cm^-2(2.732E12 cm^-2)。当In_yAl_1-yAs线性渐变缓冲层厚度为50 nm时，材料的表面形貌得到了很好的改善，均方根粗糙度（RMS）为0.154 nm。本研究可以为HEMT器件性能的提高提供强有力的支持。更多还原

【Abstract】 This paper reports the material characteristics of In_{0. 66}Ga_{0. 34}As/In_yAl_1-yAs high electron mobility transistor（HEMT）. The linearly graded In_yAl_1-yAs buffer layer was grown on InP substrates by gas source molecular beam epitaxy（GSMBE）. The influence of In_yAl_1-yAs graded buffer layer with different thickness and different indium contents on the surface quality,the electron mobility and the concentrations of two-dimensional electron gas（2DEG）was studied. It was found that the electron mobility and concentration at 300 K（77 K）were 8570 cm²/（Vs）^-1(23200 cm²/（Vs）^-1)and 3. 255×10¹²cm-2(2. 732×10¹²cm^-2). The surface morphology of the material was also well improved and the root mean square（RMS）was 0. 154 nm when the InAlAs graded buffer layer thickness was 50 nm. And this study can provide strong support for the improvement of HEMT performance.更多还原