【摘要】 本文分别以加双氧水的化学机械抛光和未加双氧水的纯机械抛光方式对In Sb晶片进行表面处理,通过分析氧化膜的生成,以及对In Sb晶片的表面划痕、表面粗糙度和表面损伤的表征,开展了两种不同抛光方式下In Sb晶片的表面质量对比研究。结果表明,在化学机械抛光过程中,In Sb晶片表面有氧化层生成,该氧化层能保护材料表面免受损伤;并且发现加入双氧水作为抛光液的化学机械抛光方法能够获得较好表面质量的In Sb晶片,其表面几乎无划痕,粗糙度降至0.606 nm,平整度约6.916 nm,且表面损伤明显降低。更多还原

【Abstract】 In this study, InSb wafers were subjected to pure mechanical polishing and chemical mechanical polishing using hydrogen peroxide. The surface quality of the wafers polished using these methods was investigated by characterizing the surface scratch, surface roughness, and surface damage and verifying if an oxide film was formed on the wafer surface. The results showed that an oxide layer was formed on the wafer surface during mechanical polishing. This layer protects the material surface from damage. Moreover,chemical mechanical polishing using hydrogen peroxide as the polishing solution facilitated the formation of InSb wafers with good surface quality. The surface roughness was reduced to 0.606 nm, the flatness was about 6.916 nm, and the damage was significantly reduced.更多还原