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Al2O3掺杂N型赝三元半导体复合材料的微观结构与热电性能

Microstructures and Thermoelectric Properties of N-type Al2O3-doped Pseudo-ternary Semiconductor Composites Materials

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【作者】 刘瑞雪胡建民

【Author】 Liu Ruixue;Hu Jianmin;Harbin Normal University;

【通讯作者】 胡建民;

【机构】 哈尔滨师范大学

【摘要】 采用机械合金化方法制备N型赝三元半导体热电材料,经500℃高温烧结后,与纳米Al2O3粉体充分混合,在200℃下热压成型得到N型Al2O3-(Bi2Te30.9(Sb2Te30.05(Sb2Se30.05复合块体热电材料.微观结构分析和热电性能测试结果表明,高温烧结后材料的结晶度变高;随Al2O3掺杂浓度的增高,材料的电导率和热导率逐渐减小,而Seebeck系数几乎不变.在Al2O3掺杂浓度为0.5 wt%时,热电优值达到2.05×10-3 K-1.

【Abstract】 In this paper, N-type pseudo-ternary semiconductor thermoelectric materials were prepared by mechanical alloying method. N-type Al2O3-(Bi2Te30.9(Sb2Te30.05(Sb2Se30.05 composite block thermoelectric materials were obtained after being sintered at a high temperature of 500 ℃ and fully mixed with nano Al2O3 powder and hot-pressed at 200 ℃. Microstructure analysis and thermoelectric properties test results show that the crystallinity of the materials becomes higher after high temperature sintering. With the increase of Al2O3 doping concentration, the electrical conductivity and thermal conductivity of the material gradually decrease, while the Seebeck coefficient is almost unchanged. When Al2O3 doping concentration is 0.5 wt%, the thermoelectric optimum value reaches 2.05×10-3 K-1.

【基金】 黑龙江省自然科学基金项目(LH2019A019)
  • 【文献出处】 哈尔滨师范大学自然科学学报 ,Natural Science Journal of Harbin Normal University , 编辑部邮箱 ,2022年01期
  • 【分类号】TB33
  • 【下载频次】131
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