节点文献
金刚石刀轮滚压脆断单晶硅和蓝宝石的实验研究
Experimental study on rolling and brittle fracture to single crystal silicon and sapphire by diamond cutter wheel
【摘要】 集成电路芯片快速分割是半导体器件制造的关键工艺。通常采用固定的单点金刚石刀刃划线切断,但其过程会产生不规则裂纹,损害芯片电路。因此,针对单晶硅与蓝宝石两种芯片材料,采用直径为2.5 mm的金刚石刀轮进行滚压脆断加工实验,分析不同加工工艺下的应力分布,探究刀轮几何形状和工艺参数对不同材料的裂纹扩展和滚压脆断质量的影响。结果表明:刀轮刃端处集中的张应力引起微裂纹的产生与扩展,在滚压方向上逐渐形成微切痕,导致最后的脆断,但也会产生横向裂纹,使脆断边缘破碎。在合适的张应力下,边沿破碎低至约1μm,脆断面质量较高。此外,若芯片材料硬度和断裂韧度大,可选择较小的刀轮角度和较大的滚压压力。当单晶硅滚压压力为0.015 MPa,刃端接触处的张应力在100 MPa左右,蓝宝石的滚压压力为0.095 MPa,张应力在350 MPa左右时,滚压脆断后的断面裂纹扩展相对均匀,断面质量最优。最后实验显示,具有微锯齿结构的金刚石刀轮切割集成电路芯片的边沿质量较好。
【Abstract】 Rapid partitioning of integrated circuit chips is a key process in semiconductor device manufacturing. Usually,a fixed single-point diamond tool blade is used for scribing and cutting. However,the process can result in irregular cracks and damage chip circuits. Therefore,for two chip materials,i. e.,single crystal silicon and sapphire,a 2. 5 mm diameter diamond cutter wheel was used for rolling brittle fracture processing experiments. We analyzed the stress distribution under different machining processes and discussed the effects of the cutter wheel geometry and process parameters on crack extension and the rolling brittle fracture quality of different materials. The results show that the concentrated tension stress at the cutter wheel edge end generates and expands micro-cracks,which gradually shape micro-cutting marks in the rolling direction,leading to the final brittle fracture. However,this produces lateral cracks that make it easier to break the brittle fracture edge. Under a suitable tension stress,edge breakage is as low as approximately 1 μm and the brittle section quality is high. In addition,the greater the hardness and fracture toughness of the chip material,the smaller the cutter wheel angle and the greater the rolling pressure. When the rolling pressure of single crystal silicon is 0. 015 MPa,the tensile stress at the edge contact is approximately 100 MPa,the rolling pressure of sapphire is 0. 095 MPa,and its tensile stress is approximately 350 MPa,crack expansion of the fracture section after rolling and brittle fracture is relatively uniform,and the quality of the fracture surface is optimal. Finally,the experimental result showed that the quality of integrated circuit chips cut with the diamond cutter wheel with a micro-serrated structure is better.
【Key words】 single crystal silicon; sapphire; diamond cutter wheel; crack extension; precision rolling and brittle fracture;
- 【文献出处】 光学精密工程 ,Optics and Precision Engineering , 编辑部邮箱 ,2022年06期
- 【分类号】TN405
- 【下载频次】139