【摘要】 使用自制的陶瓷结合剂金刚石砂轮磨削6H-SiC晶片，研究了6H-SiC晶片材料去除方式和砂轮的磨损机理。研究结果表明：6H-SiC晶片材料去除方式主要是脆性断裂，磨削后晶片的表面粗糙度为Ra0.108μm,且砂轮部分气孔被磨屑填充，金刚石磨粒有轻微的破碎与磨损现象。更多还原

【Abstract】 The designed vitrified diamond grinding wheel is used for grinding 6 H-SiC wafer.In this paper, the material removal mechanism of 6 H-SiC wafer and the wear mechanism of vitrified bond diamond grinding wheel are investigated.The result shows that the surface roughness of 6 H-SiC wafer is 0.108μm.A brittle mode dominated the material removal of 6 H-SiC wafer is observed.After grinding, some pores are covered by debris and some bonded diamond grits are slightly fractured and worn out.更多还原