【摘要】 传统短沟道的纳米MOSFET噪声主要为受抑制的散粒噪声，其次为热噪声；在建立器件的噪声模型时，并没有考虑栅极噪声源与源极噪声源二者之间的电荷耦合，其耦合效应会形成互相关噪声。实验测试了20 nm MOSFET的噪声，结果分析得到短沟道MOSFET的噪声主要为散粒噪声、热噪声和互相关噪声。其次，根据MOSFET的器件物理结构及特性推导了纳米MOSFET的互相关噪声公式。在此基础上，比较受抑制的散粒噪声、热噪声和互相关噪声随沟道长度、温度、源漏电压和栅极电压的变化关系，所得结论有助于提高MOSFET器件的工作效率、可靠性及寿命。更多还原

【Abstract】 In the traditional channel noise model, the noise in nano-MOSFET were the suppressed shot noise and thermal noise. However, the cross-correlation noise between the gate current noise and source current noise were not considered. In this study, the noise of 20 nm MOSFET were tested experimentally, and the result shows that the suppressed shot noise, thermal noise and cross-correlation noise are the main types of the noise in nano-MOSFET. Furthermore, according to the the physical structure and characteristics of the MOSFET, the cross-correlation noise model were derived. Based on this model, the variation of the suppressed shot noise, thermal noise and cross-correlation noise with the channel length, temperature, source-drain voltage and gate voltage were analyzed. The results could improve the efficiency, reliability and lifetime of the MOSFET devices.更多还原