【摘要】 提出了一种新型无电压折回现象的超结逆导型绝缘栅双极型晶体管（RC-IGBT），并基于Sentaurus TCAD进行了电学特性仿真。提出的超结RC-IGBT通过超结的P柱将集电极N~+区域与P~+区域隔开，消除了传统超结RC-IGBT正向导通时存在的折回现象。与传统超结RC-IGBT结构相比，在导通电流密度为100 A/cm~2时，新结构的正向导通压降减少了20.9%，反向导通压降减少了20.7%，在相同正向导通压降（1.55 V）下，新结构的关断损耗降低了19.9%。更多还原

【Abstract】 A novel superjunction reverse conducting insulated gate bipolar transistor (RC-IGBT) without snapback phenomenon is proposed,and the electrical characteristics are simulated based on Sentaurus TCAD.The proposed superjunction RC-IGBT separates the collector N~+region from the P~+region through the P-pillar which eliminates the snapback phenomenon existing in the forward conduction of the conventional superjunction RC-IGBT.Compared with the conventional superjunction RC-IGBT structure,the forward conduction voltage of the new structure is reduced by 20.9%and the reverse conduction voltage of the new structure is reduced by 20.7%when the conduction current density is 100 A/cm~2,the turn-off loss of the new structure is reduced by 19.9%under the same conduction voltage (1.55 V).更多还原