【摘要】 SiC功率器件是许多航天器用电子设备的重要组成部分，是保障深空探测任务顺利进行的前提和基础。在梳理SiC功率器件发展概况的同时，针对不同SiC功率器件（SiC SBD、 SiC JBS、 SiC MOSFET）在空间辐射环境下的性能退化规律进行了概述，重点分析了辐射环境下SiC功率器件的损伤机理，为SiC功率器件抗辐射技术的长远发展提供了参考。更多还原

【Abstract】 SiC power device is an important part of many spacecraft electronic equipments. It is the premise and foundation to ensure the smooth progress of deep space exploration mission. The development of SiC power devices is combed, the performance degradation law of different SiC power devices(SiC SBD, SiC JBS, SiC MOSFET) in space radiation environment is summarized, and the damage mechanism of SiC power devices in radiation environment is mainly analyzed, which provide a reference for the long-term development of radiation resistance technology of SiC power devices.更多还原