【摘要】 基于第三代宽禁带半导体材料4H-SiC的超高压门极可关断晶闸管（Gate Turn-Off Thyristor,GTO）器件，在双向载流子注入和电导调制效应的作用下，器件在耐高压的同时获得高通态电流，在功率密度和可靠性等方面可以满足超大功率应用的要求。考虑到正向阻断电压、正向导通压降和脉冲电路下的开启时间等，提出了10 kV 4H-Si CGTO器件，借助Silvaco TCAD仿真研究了GTO器件的正向导通特性、正向阻断特性、动态开关特性和脉冲放电特性，得出了其正向导通压降为4.605 V，正向阻断电压为14.78 kV，开启时间为55 ns，关断时间为13.3 ns。更多还原

【Abstract】 The ultra-high voltage gate turn-off thyristor(GTO) device based on the third-generation wide-bandgap semiconductor material 4H-SiC is under the effect of bidirectional carrier injection and conductance modulation. It can obtain high on-state current at the same time of high withstand voltage, and meet the requirements of ultra-high power applications in terms of power density and reliability. Considering the forward blocking voltage, forward conduction voltage drop and the turn-on time under the pulse circuit, a 10 kV 4H-Si CGTO device is proposed, with the help of Silvaco TCAD simulation, the forward conduction characteristics, forward blocking characteristics, dynamic switching characteristics and pulse discharge characteristics of GTO devices are studied. It is concluded that the forward voltage drop is 4.605 V, the forward blocking voltage is 14.78 k V, the turn-on time is 55 ns, and the turn-off time is 13.3 ns.更多还原