节点文献

基于SiP技术的多片DDR3高速动态存储器设计

Design of Multi-Chip DDR3 High-Speed Dynamic Memory Based on SiP Technology

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 张小蝶邱颖霞许聪邢正伟

【Author】 ZHANG Xiaodie;QIU Yingxia;XU Cong;XING Zhengwei;Anhui Siliepoch Technology Co., Ltd.;The 38th Institute of CETC;

【机构】 安徽芯纪元科技有限公司中国电子科技集团公司第三十八研究所

【摘要】 基于系统级封装(System in Package, Si P)技术,结合自研自主可控DSP处理器"魂芯"II-A和多片DDR3颗粒,详细介绍了一款高速动态存储控制一体化Si P设备的设计方案和仿真验证分析结果。重点介绍了此款Si P的电路拓扑设计、版图设计,并从拓扑结构波形仿真、DDR3时序裕量计算、与板级实现方案对比三方面对其PCB后仿进行了分析和验证,仿真结果符合规范要求,证明了所采用的Fly-By拓扑适用于CPU与多片DDR3颗粒所组成的一体化Si P设备,且Si P设备性能优于板级实现方案。

【Abstract】 Based on the system in package(Si P) technology, combined with a self-developed independent controllable DSP processor( "HX" II-A) and multi-chip DDR3 particles, the design scheme and simulation verification analysis of a high-speed dynamic memory control integrated Si P is introduced in detail. Focused on the circuit topology design and the layout design of this Si P, its PCB post-simulation is verified from three aspects, including topology simulation waveform, DDR3 timing margin calculation, and comparison with board-level implementation schemes. The simulation results are compounded and standardized, and the requirements prove that the adopted Fly-By topology is suitable for integrated Si P equipment which is composed of CPU and multiple DDR3 particles. In addition, the performance of Si P equipment is better than the board-level implementation scheme.

【关键词】 DDR3高速电路Si P信号完整性Sigrity仿真
【Key words】 DDR3high-speed circuitSi Psignal integritySigrity simulation
  • 【文献出处】 电子与封装 ,Electronics & Packaging , 编辑部邮箱 ,2022年01期
  • 【分类号】TP333
  • 【被引频次】1
  • 【下载频次】189
节点文献中: 

本文链接的文献网络图示:

本文的引文网络