【摘要】 SiC MOSFET因其耐高温、高压的优点，被广泛应用于大功率固态功率控制器的设计中。针对固态功率控制器工况，选用裸片封装的SiC MOSFET,对功率模块的堆叠结构进行设计及热阻分析；对键合结构的选型与布局进行设计；对封装连接铜线、铜带的热影响进行分析。在封装设计基础上，通过有限元仿真对功率模块热性能进行评估。最后，搭建平台进行单路热测试。结果验证了仿真的准确性，以及封装设计的合理性。更多还原

【Abstract】 SiC MOSFETs are widely used in the design of high-power solid-state power controllers due to the high temperature and high voltage resistance advantages.Aiming at the working conditions of solid-state power controllers, the die-packaged SiC MOSFETs are selected.The stacked structure of the power module is designed and its thermal resistance is analyzed.The selection and layout of the bonding structure is designed.The thermal influence of the package connection copper wire and copper tape is analyzed.Based on the packaging design, the thermal performance of the power module is evaluated by the finite element simulation.Finally, a platform for single channel thermal test is build.The results verify the accuracy of the simulation and the rationality of the packaging design.更多还原