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多芯片并联IGBT模块老化特征参量甄选研究

Selection of Aging Characteristic Parameter for Multi-Chips Parallel IGBT Module

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【作者】 丁雪妮陈民铀赖伟罗丹魏云海

【Author】 Ding Xueni;Chen Minyou;Lai Wei;Luo Dan;Wei Yunhai;State Key Laboratory of Power Transmission Equipment & System Security and New Technology Chongqing University;

【通讯作者】 赖伟;

【机构】 输配电装备及系统安全与新技术国家重点实验室(重庆大学)

【摘要】 多芯片并联的绝缘栅双极型晶体管(IGBT)是大容量电力电子装备的核心器件,其运行可靠性受到业界的广泛关注。甄选能表征多芯片并联IGBT模块老化状态的特征参量对系统主动运维和可靠性提升十分重要。该文以英飞凌1.7kV多芯片并联封装IGBT模块为研究对象,对比分析芯片焊料层老化和键合线脱落对电-热-磁特性影响规律,提出磁感应强度作为多芯片并联IGBT模块疲劳失效状态监测的特征量。首先,建立多芯片并联IGBT模块稳态导通等效电路,定性分析模块退化与磁感应强度的耦合关系;其次,基于模块的三维电-热-磁有限元模型研究多芯片并联IGBT模块电、热、磁参量在老化失效中的变化规律和灵敏性。结果表明,磁感应强度在两种失效模式中灵敏性均最高,并不受环境温度变化的影响,而且在测量中可以避免与模块电路的直接接触,对模块的正常运行影响较小,因此适合作为多芯片并联功率模块运行状态监测的特征参量。

【Abstract】 Multi-chips parallel Insulated Gate Bipolar Transistor(IGBT) is the key device of largecapacity power electronic equipment, and its operational reliability has been widely concerned by the industry. Selecting the characteristic parameter which can characterize the aging state of multi-chips parallel IGBT devices is very important for the active maintenance and improvement of reliability of the system. In this paper, the effects of solder layer aging and bond wire lift-off on the electro-thermalmagnetic characteristics of the Infineon’s 1.7kV multi-chips parallel IGBT module are analyzed, and the magnetic flux density is proposed as the characteristic parameter for condition monitoring of the multichips parallel IGBT module fatigue failure. Firstly, the steady-state conduction equivalent circuit of multi-chips parallel IGBT module was established, and the coupling relationship between module degradation and magnetic flux density was qualitatively analyzed. Secondly, based on the threedimensional electro-thermal-magnetic finite element model, the variation and sensitivity of electrothermal-magnetic parameters of multi-chips parallel IGBT module during aging failure process were studied. Results show that the magnetic flux density has the highest sensitivity in both failure modes,and is not affected by the change of ambient temperature. In addition, direct contact with the module circuit can be avoided during the measurement, which has little impact on the normal operation of the module. Therefore, magnetic flux density is suitable to be used as the characteristic parameter for condition monitoring of multi-chips parallel power module.

【基金】 国家重点研发计划(2018YFB0905800);中央高校基本科研业务费(2020CDJQY-A026);国家自然科学基金(51707024)资助项目
  • 【文献出处】 电工技术学报 ,Transactions of China Electrotechnical Society , 编辑部邮箱 ,2022年13期
  • 【分类号】TM46;TN322.8
  • 【下载频次】262
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