【摘要】 β相氧化镓较碳化硅、氮化镓等第三代半导体材料具有更加出色的材料特性，如更宽的禁带宽度(～4.9 eV)、更高的击穿场强(～8 MV/cm)、更大的巴利加优值(3 400)和更低的衬底生长成本等，在大功率电子器件和日盲探测器等方面展现出巨大的应用前景。外延生长高质量的氧化镓薄膜是制备高性能器件的前提与基础。目前，虽然在高质量氧化镓单晶生长和器件研究等方面已取得了显著进展，但是仍存在较多问题，如异质外延晶体质量的提高、p型掺杂的实现、器件性能优化等。本文总结了近年来国内外研究者在氧化镓薄膜的生长技术、同质/异质外延、半导体掺杂、电学性质、接触特性及其在功率器件和紫外光电探测器应用等方面的研究进展。更多还原

【Abstract】 Monoclinic gallium oxide（β-Ga₂O₃） is an emerging wide bandgap semiconductor with an ultrawide bandgap（～4.9 eV） at room temperature, an high breakdown field strength（～8 MV/cm）, a Baliga’s figure of merit（BFOM） of 3 400, and availability of native single crystal substrates using inexpensive melt-based growth methods. These attractive properties of β-Ga₂O₃ make it an ideal candidate for potential applications such as high-power electronic devices and solar blind ultraviolet（UV） photodetectors. It is well known that the high quality epitaxial layer is the prerequisite for the fabrication of high performance devices. Up to now, the β-Ga₂O₃ epitaxial layers have been prepared by various methods, and several kinds of devices have been fabricated. However, many challenges still exist, including heteroepitaxial growth maturity, p-type doping, and device performance optimization. This article reviews the current status of the synthesis technologies, the substrates for homoepitaxy/heteroepitaxy, doping, electrical properties and the applications of power devices and ultraviolet photodetectors.更多还原