【摘要】 采用注浆成型法在不同烧结参数下制备ITO靶材，研究不同氧气流量及烧结保温时间对ITO靶材的相含量与电阻率的影响。通过X射线衍射（XRD）和扫描电镜（SEM）对ITO靶材的物相组成以及微观组织形貌进行表征，运用Rietveld法对样品XRD数据进行结构精修以计算其相含量。研究结果表明：靶材均由主相（In₂O₃相）以及第二相(In₄Sn₃O₁₂相)组成。当氧气流量由40 L/min提高到160 L/min时，第二相含量由19.82%（质量分数，下同）逐渐增加到25.83%;当保温时间由6 h延长到12 h时，第二相含量由19.79%逐渐增加到31.27%。对不同氧气流量以及烧结保温时间下所制备的样品进行相对密度以及电阻率测定，结果表明，靶材密度是影响其电阻率的最主要因素，靶材的电阻率随着密度的增加而降低。靶材密度相近时，靶材相含量对其电学性能有较大的影响，此时靶材的电阻率随着第二相含量的增加而增大。更多还原

【Abstract】 The ITO target was prepared by the grouting method at different sintering parameters, and the effects of different oxygen flow and sintering holding time on the phase content and resistivity of the ITO target were studied. The phase composition and microstructure morphology of the ITO target were characterized by X-ray diffraction（XRD） and scanning electron microscopy（SEM）, and the XRD data of the sample was refined by the Rietveld method to calculate its phase content. The results show that the targets are composed of In₂O₃ phase and In₄Sn₃O₁₂ phase. When the oxygen flow increases from 40 L/min to 160 L/min, the In₄Sn₃O₁₂ phase content gradually increases from 19.82 wt% to 25.83 wt%. When the holding time increases from 6 h to 12 h, the In₄Sn₃O₁₂ phase content gradually increased from 19.79 wt% to 31.27 wt%. The relative density and resistivity of samples prepared under different oxygen flow and sintering holding time were measured. The results showed that the target density is the most important factor affecting its resistivity, and the resistivity of the target decreases as the density increases. When the density of the target is similar, the phase content of the target influence its electrical performance. At this time, the resistivity of the target increases as the second phase increases.更多还原