【摘要】 研究了退火温度对铂薄膜微观结构和电学性能的影响。在高曲率微小金属探针表面原位制造铂薄膜温度探测器,在450,500,550℃条件下进行退火。研究了不同厚度SiO₂薄膜对铂薄膜表面形貌的影响,重点介绍了经过不同温度退火后铂薄膜表面形貌和电学性能变化及其两者之间的相关性。实验结果表明:在金属探针表面制备2μm的SiO₂薄膜,既可以达到绝缘的效果,也可以保证粘附性。铂薄膜温度探测器初始电阻值、灵敏度和迟滞都有较大提高。但温度越高,对铂薄膜温度探测器的线性度影响越小。由于初始电阻值的变化幅度明显大于斜率ΔT/ΔR的变化幅度,所以电阻温度系数（TCR）均减小。因此,利用接近式光刻技术直接在高曲率物体表面制备金属薄膜,经过退火处理后可以得到稳定性高,响应速度较快、热阻性能较好的铂薄膜温度探测器。更多还原

【Abstract】 The effect of annealing temperature on microstructure and electrical properties of platinum films is studied.The platinum film temperature detector is fabricated in situ on the surface of the high-curvature tiny metal probe and annealed at 450,500,550 ℃.The effects of different thicknesses of SiO₂ films on the surface morphology of platinum films are studied, and the changes in the surface morphology and electrical properties of platinum films after annealing at different temperatures and the correlation between the two are introduced.The experimental results show that the preparation of a 2 μm SiO₂ film on the surface of the metal probe can not only achieve the insulation effect, but also ensure the adhesion.The initial resistance, sensitivity and hysteresis of platinum thin film temperature detectors are greatly improved.However, the higher the temperature, the smaller the impact on the linearity of the platinum film temperature detector.Since the change of the initial resistance value is obviously greater than the change of the slope ΔT/ΔR,the temperature coefficient of resistance（TCR）is reduced.Therefore, using proximity photolithography technology to directly prepare a metal thin film on the surface of a high-curvature object, after annealing, a platinum thin film temperature detector with high stability, fast response speed, and good thermal resistance can be obtained.更多还原