【摘要】 随着当前传感器的小型化和集成化趋势热敏薄膜材料受到广泛关注。为制备电阻率低、温度性能稳定的负温度系数（NTC）热敏电阻，以Mn_1.56Co_0.96Ni_0.48O₄为研究对象，通过离子束溅射法在硅晶圆上制备热敏电阻薄膜，使用真空退火炉进行退火，成功制备出热敏电阻。采用扫描电子显微镜（SEM）对样品结构和形貌进行表征，并用恒温槽、数字万用表等对样品进行电学性能测试。结果表明采用离子束溅射法可以获得粒径小、致密和均匀性好的低电阻率热敏电阻薄膜，薄膜电阻率降低至2.18×10^-3Ω·cm, 25℃下电阻为81.635Ω,在0～100℃测试温区内，制备的热敏薄膜材料具有明显的负温度特性。更多还原

【Abstract】 Thermal sensitive thin film materials have received extensive attention with the current trend of miniaturization and integration of sensors. To prepare the negative temperature coefficient（NTC） thermistor with low resistivity and stable temperature performance, with Mn_1.56Co_0.96Ni_0.48O₄ as research object, thermistor thin films were prepared on silicon wafers by ion beam sputtering method. Vacuum annealing furnace was used for annealing, and the thermistor was successfully prepared. The structure and morphology of the sample were characterized by scanning electron microscope（SEM）. The electrical properties of the sample were tested with constant temperature bath, digital multi-meter and so on. The results show that the low resistivity thermistor thin film with small particle size, compactness and good uniformity can be obtained by the ion beam sputtering method. The film resistivity reduces to 2.18×10^-3 Ω·cm, the resistance is 81.635 Ω at 25 ℃. In the test temperature range of 0-100 ℃, the prepared thermal sensitive thin film material has obvious negative temperature characteristics.更多还原