【摘要】 二氧化钒薄膜独特的半导体-金属相变特性使其在智能窗等领域有着广阔的应用前景。该研究采用直流反应共溅射技术沉积二氧化钒薄膜，通过调节Ti靶的放电电流，实现了VO₂薄膜不同量的Ti掺杂。并用X射线衍射仪、微区拉曼光谱仪、扫描电子显微镜、分光光度计与四探针测量系统对样品微结构及相变特性进行表征，分析不同Ti掺杂量对VO₂薄膜微结构、表面形貌、相变温度、红外调制率的影响。研究结果表明，在Ti靶15 mA放电电流下掺杂的样品，太阳能调制能力有明显提高，达13.8%，但是过高的Ti掺杂则会使VO₂薄膜相变性能弱化甚至消失。更多还原

【Abstract】 The vanadium dioxide(VO2)film has broad applications in smart windows and other application fields due to its unique semiconductor-metal phase transition characteristics. The VO2 films were deposited by DC reactive co-sputtering technology in this study. By adjusting the discharge current of the Ti target, different amounts Ti-doping of VO2 films was achieved. The samples microstructure and phase transition characteristics were characterized by XRD, Micro-Raman spectrophotometer, SEM, spectrophotometer, and four-probe system. The effects of Ti doping levels on the microstructure, surface morphology, phase transition temperature and IR modulation capability of the VO2 films are analyzed. The research results show that the solar energy modulation capability of the doped sample at 15 mA discharge current with a Ti target is significantly improved, reaching 13.8%. However, an excessive amount of Ti doping will weaken or even disappear the phase transition performance of the VO2 film.更多还原