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Synthesis and characterizations of boron and nitrogen co-doped high pressure and high temperature large single-crystal diamonds with increased mobility

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【作者】 苗辛原马红安张壮飞陈良超周丽娟李敏斯贾晓鹏

【Author】 Xin-Yuan Miao;Hong-An Ma;Zhuang-Fei Zhang;Liang-Chao Chen;Li-Juan Zhou;Min-Si Li;Xiao-Peng Jia;College of Physics, Guangxi University of Science and Technology;State Key Laboratory of Superhard Materials, College of Physics, Jilin University;Key Laboratory of Material Physics of Ministry of Education, and School of Physical Engineering, Zhengzhou University;

【通讯作者】 苗辛原;

【机构】 College of Physics, Guangxi University of Science and TechnologyState Key Laboratory of Superhard Materials, College of Physics, Jilin UniversityKey Laboratory of Material Physics of Ministry of Education, and School of Physical Engineering, Zhengzhou University

【摘要】 We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature(HPHT) conditions(5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy(XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy(FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm2·V-1·s-1, possible reasons were discussed in the paper.

【Abstract】 We synthesized and investigated the boron-doped and boron/nitrogen co-doped large single-crystal diamonds grown under high pressure and high temperature(HPHT) conditions(5.9 GPa and 1290℃). The optical and electrical properties and surface characterization of the synthetic diamonds were observed and studied. Incorporation of nitrogen significantly changed the growth trace on surface of boron-containing diamonds. X-ray photoelectron spectroscopy(XPS) measurements showed good evident that nitrogen atoms successfully incorporate into the boron-rich diamond lattice and bond with carbon atoms. Raman spectra showed differences on the as-grown surfaces and interior between boron-doped and boron/nitrogen co-doped diamonds. Fourier transform infrared spectroscopy(FTIR) measurements indicated that the nitrogen incorporation significantly decreases the boron acceptor concentration in diamonds. Hall measurements at room temperature showed that the carriers concentration of the co-doped diamonds decreases, and the mobility increases obviously. The highest hole mobility of sample BNDD-1 reached 980 cm2·V-1·s-1, possible reasons were discussed in the paper.

【基金】 supported by the National Natural Science Foundation of China (Grant Nos. 51772120, 11704340, 11604246, and 11865005);the Scientific and Technological Project in Henan Province;China (Grant No. 202102210198);the Natural Science Foundation of Guangxi (China)(Grant No. 2018GXNSFAA281024);Doctor Start-up Foundation of Guangxi University of Science and Technology (Grant No. 20Z38)
  • 【文献出处】 Chinese Physics B ,中国物理B , 编辑部邮箱 ,2021年06期
  • 【分类号】TQ163
  • 【被引频次】1
  • 【下载频次】33
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