【摘要】 大功率半导体激光器是现代激光加工设备、激光再制造设备、激光医疗、激光显示以及国防设备中重要的关键基础元器件和核心组件,在工业和国防等领域有着广泛的应用。提高半导体激光器的输出功率首先需要确定影响功率输出的因素,然后通过优化外延材料、芯片结构和制备工艺来解决这些问题。因此,对大功率半导体激光器输出功率影响因素的研究具有重要的意义。基于此,主要对限制GaAs基大功率半导体激光器输出功率的因素进行了综述,总结了近几年GaAs基大功率半导体激光器在腔面灾变、载流子泄漏、双光子吸收以及纵向空间烧孔方面的研究进展,这对进一步提高半导体激光器的输出功率、优化半导体激光器的结构设计、改进外延材料的质量以及提高材料的外延技术具有重要意义。更多还原

【Abstract】 High-power semiconductor lasers are indispensably fundamental and essential components in the fields of equipment for modern laser processing,laser remanufacturing,laser medical treatment,laser displaying and national defense.They have extensive applications in industrial and defense fields.In order to increase the output power of semiconductor lasers,it is necessary to determine the impact factors of output power.Then,the output power improvement might be achieved through optimizing materials,structure and preparation process of semiconductor laser.Therefore,it is of great significance to study the impact factors on output power of semiconductor lasers.In this paper,the limitations for output power improving of Ga As-based high-power semiconductor lasers were reviewed.The research progress on catastrophic optical damage,carrier leakage,two-photon absorption and longitudinal spatial hole burning of Ga As-based high-power semiconductor lasers was summarized.It might accelerate the output power increasement,structural design optimization,materials quality improvement,and epitaxy technology promotion of semiconductor lasers.更多还原