【摘要】 InSe是一种典型层状金属硫化物半导体,在超快光子学器件开发方面具有巨大应用潜力。本文通过混合InSe纳米片和PVA形成InSe-PVA薄膜制备可饱和吸收体。InSe可饱和吸收体表现出明显的非线性吸收特性,非饱和吸收和调制深度分别为37.5%和9.55%。以InSe为锁模器件,在掺铒光纤激光器中产生了传统孤子。中心波长、传统孤子脉宽和脉冲频率分别为1568.73nm、2.06ps和1.731MHz。在泵功率为413m W时,最大平均输出功率为16.4 m W。这是首次以InSe为锁模器件产生的传统孤子激光。实验进一步证明InSe是一种可应用于超光纤激光的优秀非线性吸收材料。更多还原

【Abstract】 Indium selenide(InSe) is a typical layered metal-chalcogenide semiconductor that has potential for developing ultrafast optoelectronic devices. In this work, InSe-polyvinyl alcohol(InSe-PVA) film is employed as saturable absorber and prepared by mixing InSe nanosheets solution and polyvinyl alcohol solution. The nonlinear absorption properties of the InSe saturable absorber(InSe-SA) are investigated, showing that the nonsaturable absorption and modulation depth are 37.5% and 9.55%, respectively. Traditional soliton lasers are generated in erbium-doped fiber(EDF) laser-employed InSe as a mode-locker. The central wavelength and pulse duration of the traditional soliton pulse are 1568.73 nm and 2.06 ps, respectively, under a repetition rate of 1.731 MHz. The maximum average output power is 16.4 mW at the pump power of 413 mW. To the best of our knowledge, this is the first demonstration of a traditional soliton pulse with InSe as a mode-locker. The experimental results further demonstrate that InSe is an outstanding nonlinear absorption material in ultrafast fiber laser.更多还原