【摘要】 借助有限元软件分析了原始探测器模块和加入Kovar平衡层探测器模块的应力分布情况,模拟结果表明,增加Kovar平衡层后,探测器HgCdTe外延层上的热应力有所减小,而探测器芯片表面中心位置处的形变量明显减小。在不改变平衡层材料前提下,当平衡层厚度为0.2 mm、0.5 mm、1 mm、1.5 mm和2 mm时,HgCdTe芯片的最大应力随平衡层厚度的增加呈现先大幅度减小后小幅度增加的趋势,在厚度取1 mm时探测器芯片的最大热应力值最低。通过增加Kovar平衡层可有效改善大面阵红外探测器芯片的热应力水平。更多还原

【Abstract】 Finite element analysis software was used to analyze the stress distribution of the original detector module and the detector module adding Kovar equilibrium layer. The simulation results showed that the thermal stress of the detector HgCdTe epitaxial layer decreased to some extent after adding the equilibrium layer,while the low-temperature warpage variable at the center of the detector chip surface decreased significantly. Without changing the material of the equilibrium layer,when the thickness of the equilibrium layer is 0. 2 mm,0. 5 mm,1 mm,1. 5 mm and 2 mm,the maximum stress on the HgCdTe chip first decreases greatly and then increases slightly with the increase of the thickness of the equilibrium layer. When the value of thickness is 1 mm,the maximum thermal stress on the detector chip is the lowest. Thermal stress level of large infrared detector chip can be improved by adding Kovar equilibrium layer.更多还原