【摘要】 采用传统布里奇曼法生长碲锌镉晶体,在配料过程中添加适当过量的Cd,并在晶体生长结束阶段的降温过程中加入晶锭原位退火工艺,晶体的第二相夹杂缺陷得到了有效抑制。根据晶体第二相夹杂缺陷的形成机理,结合热扩散理论和碲锌镉晶体的P-T相图,研究了退火温度对晶体第二相夹杂缺陷密度和粒度（尺寸）的影响,获得了抑制碲锌镉晶体第二相夹杂缺陷的退火条件。利用优化的退火条件制备碲锌镉晶体,晶体第二相夹杂缺陷的尺寸小于10μm,密度小于250 cm^-2。更多还原

【Abstract】 Second-phase-inclusion defects in Bridgman-grown CdZnTe crystals were decreased via post-growth in-situ annealing combined with excess Cd in CdZnTe ingots. Based on the formation mechanism of the second-phase-inclusion defects in Bridgman-grown CdZnTe, the relationship between second-phase-inclusion defects and annealing temperature was studied. The size of second-phase-inclusion defects was reduced to less than 10 μm and their density to less than 250 cm^-2 in CdZnTe at an optimized in-situ post-annealing temperature.更多还原